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765940 [PH] 菲律宾求购硅片(Silicon Wafer)

 
 
Silicon Wafer (test wafers for beta process, p-type)
Silicon Wafer Specification



Final Process Application:                   Test wafers for beta process, p-type                


A.  Substrate                                        SP-beta-04

Crystal growth method:           Cz, test grade
Wafer size:                              150 mm diameter x 125 mm square (see page 2)
Substrate Type:                       p-type
Dopant:                                    Boron
Substrate Resistivity:               greater than 10 W.cm
Orientation:                             <100> +/- 1 degree
Flat orientation, primary:         {110}    +/- 1 degree
Wafer Thickness:                     250 550 um
Surface finish:                         Single side polished
Other surface finish:                None
Edge rounding:                        Yes
Parameters:

  

Parameter

Min

Ave

Max

Unit

Method


Diameter
149.5

  
150.5
mm

  

Length/Width
124.5

  
125.5
mm

  

Resistivity
10

  

  
�-cm

  

Thickness
250

  
550
microns

  

Oxygen content

  
N/A

  

  

  

Primary flat length

  

  


  

  

Secondary flat length

  
N/A

  

  

  

Minority carrier length
na

  

  

  

  

TTV
N/A
N/A

  

  

  

Warp
N/A
N/A

  

  

  

Bow
N/A
N/A

  

  

  



  

Shipping packaging:  coin rolled, 10 wafers per package, plastic bagged. Box in protective boxes weighing no more than 50 lbs. with appropriate padding for individual box shipment.


  

Special Requirements:


Identify with laser scribe mark on polished side within 3mm of edge

Dimensions of the 125 mm pseudosquare wafer


Distance between squared sides:                             125.0 � 0.5 mm

Diameter of rounded corners:                                     150.0 � 0.5 mm

Tolerance between centers of square and circle:     D  =   0.5 mm





Post date 4-21, value member points ?

 

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